EFFECT OF RECONSTRUCTION OF A SEMICONDUCTOR SURFACE ON CRYSTAL-GROWTH

被引:24
作者
VANVECHTEN, JA [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.88006
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:593 / 596
页数:4
相关论文
共 33 条
[1]   SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM [J].
ABBINK, HC ;
BROUDY, RM ;
MCCARTHY, GP .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) :4673-&
[2]  
BAUERLE F, 1972, J APPL PHYS, V43, P3917
[3]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[4]  
CHAN JW, 1960, ACTA METALL, V8, P554
[5]  
de Kock A. J. R., 1973, Journal of Applied Physics, V44, P2816, DOI 10.1063/1.1662656
[6]  
DEKOCK AJR, 1973, PHILIPS RES REP, P1
[7]   EFFECT OF GROWTH PARAMETERS ON FORMATION AND ELIMINATION OF VACANCY CLUSTERS IN DISLOCATION-FREE SILICON-CRYSTALS [J].
DEKOCK, AJR ;
ROKSNOER, PJ ;
BOONEN, PGT .
JOURNAL OF CRYSTAL GROWTH, 1974, 22 (04) :311-320
[8]  
DEKOCK AJR, 1973, SEMICONDUCTOR SILICO, P83
[9]  
FRANK FC, 1950, PHILOS MAG, V41, P200
[10]  
FRANK FC, 1952, PHIL MAG S1, P91