EFFECT OF RECONSTRUCTION DURING EPITAXIAL-GROWTH

被引：20

作者：

VANVECHTEN, JA ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 04期

关键词：

D O I：

10.1116/1.569410

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：992 / 998

页数：7

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共 71 条

[1] SURFACE PROCESSES IN GROWTH SILICON ON (111)SILICON IN ULTRAHIGH VACUUM
ABBINK, HC
BROUDY, RM
MCCARTHY, GP
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4673 - &
[2] AMELINCKX S, 1964, SOLID STATE PHYSIC S, V6
[3] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES
ARTHUR, JR
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 4032 - &
[4] BAUERLE F, 1972, J APPL PHYS, V43, P3917
[5] ACTIVATION-ENERGY FOR MIGRATION ON SILICON (111) FACE
BEDAIR, SM
[J]. SURFACE SCIENCE, 1974, 42 (02) : 595 - 599
[6] BETHGE H, 1959, Z NATURFORSCH, V149, P307
[7] VAPOR GROWTH OF A SEMICONDUCTOR SUPERLATTICE
BLAKESLE.AE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) : 1459 - &
[8] OXYGEN-IMPLANTED DOUBLE-HETEROJUNCTION GAAS-GAALAS INJECTION LASERS
BLUM, JM
MCGRODDY, JC
MCMULLIN, PG
SHIH, KK
SMITH, AW
ZIEGLER, JF
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) : 413 - 418
[9] THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES
BURTON, WK
CABRERA, N
FRANK, FC
[J]. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) : 299 - 358
[10] Cabrera N.B., 1963, ART AUSTR, P3

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