OXYGEN-IMPLANTED DOUBLE-HETEROJUNCTION GAAS-GAALAS INJECTION LASERS

被引：31

作者：

BLUM, JM ^{[1
]}

MCGRODDY, JC ^{[1
]}

MCMULLIN, PG ^{[1
]}

SHIH, KK ^{[1
]}

SMITH, AW ^{[1
]}

ZIEGLER, JF ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1975年 / QE11卷 / 07期

关键词：

D O I：

10.1109/JQE.1975.1068675

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：413 / 418

页数：6

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[9] CONTACT RESISTANCES OF AU-GE-NI, AU-ZN AND AL TO III-V COMPOUNDS [J].

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