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CONTACT RESISTANCES OF AU-GE-NI, AU-ZN AND AL TO III-V COMPOUNDS
被引:39
作者
:
SHIH, KK
论文数:
0
引用数:
0
h-index:
0
SHIH, KK
BLUM, JM
论文数:
0
引用数:
0
h-index:
0
BLUM, JM
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1972年
/ 15卷
/ 11期
关键词
:
D O I
:
10.1016/0038-1101(72)90037-8
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1177 / &
相关论文
共 12 条
[1]
Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3
[2]
Bergh A. A., 1969, Ohmic contacts to semiconductors, P115
[3]
GROWTH OF UNIFORM EPITAXIAL LAYERS BY LIQUID-PHASE-EPITAXIAL METHOD
BLUM, JM
论文数:
0
引用数:
0
h-index:
0
BLUM, JM
SHIH, KK
论文数:
0
引用数:
0
h-index:
0
SHIH, KK
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(04)
: 1394
-
&
[4]
METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES
BRASLAU, N
论文数:
0
引用数:
0
h-index:
0
BRASLAU, N
GUNN, JB
论文数:
0
引用数:
0
h-index:
0
GUNN, JB
STAPLES, JL
论文数:
0
引用数:
0
h-index:
0
STAPLES, JL
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(05)
: 381
-
+
[5]
OHMIC CONTACTS TO EPITAXIAL PGAAS
GOPEN, HJ
论文数:
0
引用数:
0
h-index:
0
GOPEN, HJ
YU, AYC
论文数:
0
引用数:
0
h-index:
0
YU, AYC
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(06)
: 515
-
&
[6]
OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
Solid-State Electronics Laboratory, Stanford University, Stanford
HARRIS, JS
NANNICHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Solid-State Electronics Laboratory, Stanford University, Stanford
NANNICHI, Y
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
Solid-State Electronics Laboratory, Stanford University, Stanford
PEARSON, GL
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(11)
: 4575
-
&
[7]
CATHODOLUMINESCENCE ASSESSMENT OF GAAS1-X PX FOR LIGHT EMITTING DIODES
HEATH, DR
论文数:
0
引用数:
0
h-index:
0
HEATH, DR
STEWART, CEE
论文数:
0
引用数:
0
h-index:
0
STEWART, CEE
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(01)
: 21
-
&
[8]
ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS
HERZOG, AH
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
HERZOG, AH
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
GROVES, WO
CRAFORD, MG
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
CRAFORD, MG
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(04)
: 1830
-
&
[9]
VARIATION OF CONTACT RESISTANCE OF METAL-GAAS CONTACTS WITH IMPURITY CONCENTRATION AND ITS DEVICE IMPLICATION
KLOHN, KL
论文数:
0
引用数:
0
h-index:
0
KLOHN, KL
WANDINGE.L
论文数:
0
引用数:
0
h-index:
0
WANDINGE.L
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(04)
: 507
-
&
[10]
McNeil G., 1969, Ohmic contacts to semiconductors, P305
←
1
2
→
共 12 条
[1]
Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3
[2]
Bergh A. A., 1969, Ohmic contacts to semiconductors, P115
[3]
GROWTH OF UNIFORM EPITAXIAL LAYERS BY LIQUID-PHASE-EPITAXIAL METHOD
BLUM, JM
论文数:
0
引用数:
0
h-index:
0
BLUM, JM
SHIH, KK
论文数:
0
引用数:
0
h-index:
0
SHIH, KK
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(04)
: 1394
-
&
[4]
METAL-SEMICONDUCTOR CONTACTS FOR GAAS BULK EFFECT DEVICES
BRASLAU, N
论文数:
0
引用数:
0
h-index:
0
BRASLAU, N
GUNN, JB
论文数:
0
引用数:
0
h-index:
0
GUNN, JB
STAPLES, JL
论文数:
0
引用数:
0
h-index:
0
STAPLES, JL
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(05)
: 381
-
+
[5]
OHMIC CONTACTS TO EPITAXIAL PGAAS
GOPEN, HJ
论文数:
0
引用数:
0
h-index:
0
GOPEN, HJ
YU, AYC
论文数:
0
引用数:
0
h-index:
0
YU, AYC
[J].
SOLID-STATE ELECTRONICS,
1971,
14
(06)
: 515
-
&
[6]
OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE
HARRIS, JS
论文数:
0
引用数:
0
h-index:
0
机构:
Solid-State Electronics Laboratory, Stanford University, Stanford
HARRIS, JS
NANNICHI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Solid-State Electronics Laboratory, Stanford University, Stanford
NANNICHI, Y
PEARSON, GL
论文数:
0
引用数:
0
h-index:
0
机构:
Solid-State Electronics Laboratory, Stanford University, Stanford
PEARSON, GL
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(11)
: 4575
-
&
[7]
CATHODOLUMINESCENCE ASSESSMENT OF GAAS1-X PX FOR LIGHT EMITTING DIODES
HEATH, DR
论文数:
0
引用数:
0
h-index:
0
HEATH, DR
STEWART, CEE
论文数:
0
引用数:
0
h-index:
0
STEWART, CEE
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(01)
: 21
-
&
[8]
ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS
HERZOG, AH
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
HERZOG, AH
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
GROVES, WO
CRAFORD, MG
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
CRAFORD, MG
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(04)
: 1830
-
&
[9]
VARIATION OF CONTACT RESISTANCE OF METAL-GAAS CONTACTS WITH IMPURITY CONCENTRATION AND ITS DEVICE IMPLICATION
KLOHN, KL
论文数:
0
引用数:
0
h-index:
0
KLOHN, KL
WANDINGE.L
论文数:
0
引用数:
0
h-index:
0
WANDINGE.L
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(04)
: 507
-
&
[10]
McNeil G., 1969, Ohmic contacts to semiconductors, P305
←
1
2
→