FORMATION OF INTERSTITIAL-TYPE DISLOCATION LOOPS IN TETRAHEDRAL SEMICONDUCTORS BY PRECIPITATION OF VACANCIES

被引：36

作者：

VANVECHTEN, JA

机构：

来源：

PHYSICAL REVIEW B | 1978年 / 17卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.17.3197

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3197 / 3206

页数：10

共 88 条

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