SELF-INTERSTITIALS AND VACANCIES IN ELEMENTAL SEMICONDUCTORS BETWEEN ABSOLUTE-ZERO AND THE TEMPERATURE OF MELTING

被引：16

作者：

FRANK, W

机构：

[1] MAX PLANCK INST MET RES,INST PHYS,D-7000 STUTTGART 80,FED REP GER

[2] UNIV STUTTGART,INST THEORET & ANGEW PHYS,D-7000 STUTTGART 80,FED REP GER

来源：

FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS | 1981年 / 21卷

关键词：

D O I：

10.1007/BFb0108606

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：221 / 242

页数：22

相关论文

共 91 条

[1] IMPURITY-PEAK FORMATION DURING PROTON-ENHANCED DIFFUSION OF PHOSPHORUS AND BORON IN SILICON
AKUTAGAWA, W
DUNLAP, HL
HART, R
MARSH, OJ
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 777 - 782
[2] EFFECT OF OXIDATION ON ORIENTATION-DEPENDENT BORON DIFFUSION IN SILICON
ALLEN, WG
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (06) : 709 - 717
[3] OXIDATION-ENHANCED DIFFUSION OF ARSENIC AND PHOSPHORUS IN NEAR-INTRINSIC [100] SILICON
ANTONIADIS, DA
LIN, AM
DUTTON, RW
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (12) : 1030 - 1033
[4] ANTONIADIS DA, 1980, J ELECTROCHEM SOC, V127, P2243
[5] ARIMURA J, 1968, RAD EFFECTS SEMICOND, P204
[6] REDISTRIBUTION OF BORON IN SILICON AFTER HIGH-TEMPERATURE PROTON IRRADIATION
BARUCH, P
MONNIER, J
BLANCHARD, B
CASTAING, C
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (03) : 77 - 80
[7] Baruch P., 1977, I PHYS C SER, V31, P126
[8] BERNEWITZ LI, 1973, PHYS STATUS SOLIDI A, V16, P579, DOI 10.1002/pssa.2210160228
[9] ENERGY LEVELS IN IRRADIATED GERMANIUM
BLOUNT, EI
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1218 - 1221
[10] BEHAVIOUR OF PRIMARY DEFECTS IN ELECTRON-IRRADIATED GERMANIUM
BOURGOIN, J
MOLLOT, F
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 43 (01): : 343 - &

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