TERRACED-SUBSTRATE GAAS-(GAAL)AS INJECTION-LASERS

被引:23
作者
SUGINO, T
WADA, M
SHIMIZU, H
ITOH, K
TERAMOTO, I
机构
[1] Research Laboratory, Matsushita Electronics Corporation, Takatsuki, Osaka
关键词
D O I
10.1063/1.90755
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new structure of stripe-geometry lasers has been reported in which a double heterostructure is fabricated on a terraced substrate. Due to the lateral change of the effective refractive index along the junction plane, the optical gain distribution is restricted within a narrow stripe between two adjacent bends of the active layer regardless of the current spreading. This simple structure constantly exhibits a fundamental longitudinal mode oscillation as well as a single transverse-mode oscillation. No kinks have been observed in light-output-current characteristics. The linearity continues up to 10 times the threshold where the power output is 150 mW/facet.
引用
收藏
页码:270 / 272
页数:3
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