MAGNETIC FIELD EFFECTS ON INSB TUNNEL DIODES

被引：11

作者：

ESAKI, L

HAERING, RR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1962年 / 33卷 / 06期

关键词：

D O I：

10.1063/1.1728904

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：2106 / &

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[1] ESAKI TUNNELING IN THE PRESENCE OF MAGNETIC FIELDS
HAERING, RR
ADAMS, EN
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (1-2) : 8 - 17
[2] THEORY OF TUNNELING
KANE, EO
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 83 - +
[3] ZENER TUNNELING IN SEMICONDUCTORS
KANE, EO
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 12 (02) : 181 - 188
[4] ANOMALOUS BARRIER CAPACITANCE IN P-N JUNCTIONS OF INSB
LEE, CA
KAMINSKY, G
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1717 - 1719
[5] MINAMOTO MT, 1961, SOLID STATE DEVICE C