ETCHING AND ANNEALING OF SUBSTRATES FOR SUPERCONDUCTING MULTILAYERS AND DEVICES

被引：5

作者：

Berkowitz, S. J. ^{[1
]}

De Obaldia, E. ^{[1
]}

Galloway, M. L. ^{[1
]}

Morales, G. ^{[1
]}

Ludwig, K. F. ^{[1
]}

Mankiewich, P. M. ^{[1
,3
]}

Skocpol, W. J. ^{[1
]}

Ono, R. H. ^{[2
]}

Beall, J. A. ^{[2
]}

Vale, L. R. ^{[2
]}

Rudman, D. A. ^{[2
]}

机构：

[1] Boston Univ, Boston, MA 02215 USA

[2] Natl Inst Stand & Technol, 325 Broadway, Boulder, CO 80303 USA

[3] MIT, Lincoln Lab, Cambridge, MA 02139 USA

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1993年 / 3卷 / 01期

关键词：

D O I：

10.1109/77.234020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth of multilayer and step -edge devices requires patterned etching of films and substrates. It can be expected that any residual disorder introduced by etching will propagate upward through successive layers and affect device quality. We have investigated the structural and electrical quality of YBa2Cu3O7-delta grown on ion etched substrates by a variety of techniques. Co-evaporated YBa2Cu3O7-delta films deposited and postannealed on etched LaAlO3 substrates have substantially higher room temperature resistivities and wider c -axis rocking curve widths than films on unetched substrates. Annealing of the etched substrate prior to evaporation narrows the c -axis rocking curve width and restores resistivity and critical current densities to values comparable to the unetched controls. Laser ablated films on etched substrates show a smaller absolute magnitude of rocking curve broadening and no change in de electrical properties. An increase of the inhomogeneous strain was also observed in coevaporated postannealed and laser ablated films on etched substrates.

引用

页码：2950 / 2952

页数：3

共 9 条

[1] ELECTRONIC STUDY OF SRTIO3(001) SURFACES BY PHOTOEMISSION [J].