COMPOSITION DEPENDENCE OF PHOTOLUMINESCENCE SPECTRA IN ZN1-XMGXSE MIXED-CRYSTALS

被引:12
作者
FIRSZT, F [1 ]
LEGOWSKI, S [1 ]
MECZYNSKA, H [1 ]
SZATKOWSKI, J [1 ]
PASZKOWICZ, W [1 ]
SPOLNIK, ZM [1 ]
机构
[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND
关键词
D O I
10.12693/APhysPolA.88.711
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Zn1-xMgxSe mixed crystals with (x) ranging from 0 to 0.56 were obtained by high pressure Bridgman method. It has been found that a phase transition from sphalerite structure to wurtzite one occurs at x = 0.185 +/- 0.03. The crystals exhibit blue-violet and yellow-green (depending on x) luminescence in the temperature range from 40 K to room temperature. An attempt has been also made to dope Zn1-xMgxSe crystals with Al. The incorporation of Al produces a strong green photoluminescence in the temperature range from 40 K to 300 K but almost completely quenches the near-band-edge emission.
引用
收藏
页码:711 / 714
页数:4
相关论文
共 6 条
[1]   CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE [J].
AVEN, M ;
SEGALL, B .
PHYSICAL REVIEW, 1963, 130 (01) :81-+
[2]  
AVEN M, 1965, PHYS REV A, V228, P117
[3]   DOPING IN ZNSE, ZNTE, MGSE, AND MGTE WIDE-BAND-GAP SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1994, 72 (04) :534-537
[4]  
CHADI DJ, 1995, 22ND INT C PHYS SEM, V3, P2311
[5]   COMPOSITION DEPENDENCE OF THE UNIT-CELL DIMENSIONS AND THE ENERGY-GAP IN ZN1-XMGXSE CRYSTALS [J].
FIRSZT, F ;
MECZYNSKA, H ;
SEKULSKA, B ;
SZATKOWSKI, J ;
PASZKOWICZ, W ;
KACHNIARZ, J .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (02) :197-200
[6]  
FIRSZT F, IN PRESS