COMPOSITION DEPENDENCE OF THE UNIT-CELL DIMENSIONS AND THE ENERGY-GAP IN ZN1-XMGXSE CRYSTALS

被引:57
作者
FIRSZT, F [1 ]
MECZYNSKA, H [1 ]
SEKULSKA, B [1 ]
SZATKOWSKI, J [1 ]
PASZKOWICZ, W [1 ]
KACHNIARZ, J [1 ]
机构
[1] POLISH ACAD SCI,INST PHYS,PL-02668 WARSAW,POLAND
关键词
D O I
10.1088/0268-1242/10/2/013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Zn1-xMgxSe mixed crystals were grown by the high-pressure Bridgman method in the x range 0.06 to 0.285. X-ray investigations show that with increasing Mg content the transition from a sphalerite structure to wurtzite occurs at x = 0.185 +/- 0.03. After annealing in liquid zinc or zinc vapour, investigated crystals exhibit n-type conductivity as well as blue-violet and orange photoluminescence in the temperature range from 40 K to room temperature.
引用
收藏
页码:197 / 200
页数:4
相关论文
共 19 条
[1]   DOPING IN ZNSE, ZNTE, MGSE, AND MGTE WIDE-BAND-GAP SEMICONDUCTORS [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1994, 72 (04) :534-537
[2]  
Firszt F., 1994, Electron Technology, V27, P37
[3]   LUMINESCENCE PROPERTIES OF MGXZN1-XSE CRYSTALS [J].
FIRSZT, F .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (05) :712-717
[4]   BLUE-GREEN INJECTION-LASERS CONTAINING PSEUDOMORPHIC ZN1-XMGXSYSE1-Y CLADDING LAYERS AND OPERATING UP TO 394-K [J].
GAINES, JM ;
DRENTEN, RR ;
HABERERN, KW ;
MARSHALL, T ;
MENSZ, P ;
PETRUZZELLO, J .
APPLIED PHYSICS LETTERS, 1993, 62 (20) :2462-2464
[5]   LOW-THRESHOLD BURIED-RIDGE II-VI-LASER DIODES [J].
HAASE, MA ;
BAUDE, PF ;
HAGEDORN, MS ;
QIU, J ;
DEPUYDT, JM ;
CHENG, H ;
GUHA, S ;
HOFLER, GE ;
WU, BJ .
APPLIED PHYSICS LETTERS, 1993, 63 (17) :2315-2317
[6]  
ITOH K, 1967, 2 6 SEMICONDUCTING C, P1296
[7]   491-NM ZNCESE/ZNSE/ZNMGSSE SCH LASER-DIODE WITH A LOW OPERATING VOLTAGE [J].
ITOH, S ;
NAKAYAMA, N ;
OHATA, T ;
OZAWA, M ;
OKUYAMA, H ;
NAKANO, K ;
ISHIBASHI, A ;
IKEDA, M ;
MORI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (10B) :L1530-L1532
[8]  
Jain M., 1991, DILUTED MAGNETIC SEM
[9]   LUMINESCENCE PROPERTIES OF MGXZN1-XSE PREPARED BY MG DIFFUSION [J].
LOZYKOWSKI, HJ ;
HOLTZ, PO ;
MONEMAR, B .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (04) :653-665
[10]   STRUCTURAL-PROPERTIES OF CD1-XMGXTE AND CD1-X-YMGXMNYTE CRYSTALS [J].
MIOTKOWSKA, S ;
DYNOWSKA, E ;
MIOTKOWSKI, I .
ACTA PHYSICA POLONICA A, 1994, 86 (04) :605-611