EVIDENCE OF ELECTRIC QUADRUPOLE COUPLING OF FE-57 IMPLANTED IN SILICON

被引：24

作者：

SAWICKA, BD

SAWICKI, JA

机构：

[1] JAGIELLONIAN UNIV,INST PHYS,PL-30060 CRACOW,POLAND

[2] UNIV MARBURG,D-3550 MARBURG,FED REP GER

来源：

PHYSICS LETTERS A | 1977年 / 64卷 / 03期

关键词：

D O I：

10.1016/0375-9601(77)90373-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：311 / 312

页数：2

共 9 条

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[7] ENTROPY OF IONIZATION AND TEMPERATURE-VARIATION OF IONIZATION LEVELS OF DEFECTS IN SEMICONDUCTORS [J].

VANVECHTEN, JA ;

THURMOND, CD .

PHYSICAL REVIEW B, 1976, 14 (08) :3539-3550

[8] THEORY OF DIFFUSION AND EQUILIBRIUM POSITION OF INTERSTITIAL IMPURITIES IN DIAMOND LATTICE [J].

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[9]

WEYER G, 1976, J PHYSIQUE, V37, P893

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