THEORY OF IMPURITY MODEL POTENTIAL IN SEMICONDUCTORS

被引：2

作者：

JAROS, M

机构：

[1] Department of Theoretical Physics, University of Newcastle upon Tyne, England

来源：

PHYSICS LETTERS A | 1969年 / A 28卷 / 10期

关键词：

D O I：

10.1016/0375-9601(69)90709-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A donor impurity in a column IV-semiconductor is understood as a pseudoatom dipped in a covalent medium. Local change in Fermi energy is shown as a function of the impurity and host crystal properties. © 1969.

引用

页码：720 / &