LOW-TEMPERATURE HALL MEASUREMENTS ON X1C ELECTRONS IN GAAS

[11] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &

[12] Electrical properties of the GaAs X-1C minima at low electric fields from a high-pressure experiment [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4144 - 4160

[13] FLETCHER K, TO BE PUBLISHED

[14] HERBERT DC, 1972, 11 P C PHYS SEM WARS

[15] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290

[16] HILSUM C, 1965, PROG SEMICOND, V9, P137

[17] NON-G DONOR LEVELS AND KINETICS OF ELECTRON-TRANSFER IN N-TYPE CDTE [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (07) : 619 - +

[18] TRANSPORT PROPERTIES OF GAAS OBTAINED FROM PHOTOEMISSION MEASUREMENTS [J]. PHYSICAL REVIEW, 1969, 183 (03): : 740 - &

[19] NEGATIVE DIFFERENTIAL CONDUCTIVITY AND CURRENT OSCILLATIONS IN LIGHTLY DOPED N-TYPE SILICON [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (04) : 337 - +

[20] SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON [J]. PHYSICAL REVIEW, 1960, 120 (06): : 2024 - 2032

[11] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) : 1963 - &

[12] Electrical properties of the GaAs X-1C minima at low electric fields from a high-pressure experiment [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4144 - 4160

[13] FLETCHER K, TO BE PUBLISHED

[14] HERBERT DC, 1972, 11 P C PHYS SEM WARS

[15] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR [J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290

[16] HILSUM C, 1965, PROG SEMICOND, V9, P137

[17] NON-G DONOR LEVELS AND KINETICS OF ELECTRON-TRANSFER IN N-TYPE CDTE [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (07) : 619 - +

[18] TRANSPORT PROPERTIES OF GAAS OBTAINED FROM PHOTOEMISSION MEASUREMENTS [J]. PHYSICAL REVIEW, 1969, 183 (03): : 740 - &

[19] NEGATIVE DIFFERENTIAL CONDUCTIVITY AND CURRENT OSCILLATIONS IN LIGHTLY DOPED N-TYPE SILICON [J]. SOLID STATE COMMUNICATIONS, 1972, 10 (04) : 337 - +

[20] SCATTERING OF CONDUCTION ELECTRONS BY LATTICE VIBRATIONS IN SILICON [J]. PHYSICAL REVIEW, 1960, 120 (06): : 2024 - 2032