HIGHLY-SENSITIVE HALL ELEMENT WITH QUANTUM-WELL SUPERLATTICE STRUCTURES

[1] INTEGRATED SEMICONDUCTOR MAGNETIC-FIELD SENSORS [J]. PROCEEDINGS OF THE IEEE, 1986, 74 (08) : 1107 - 1132

[2] MODULATION-DOPED GAAS/(AL,GA)AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS - MODFETS [J]. PROCEEDINGS OF THE IEEE, 1986, 74 (06) : 773 - 822

[3] GEOMETRICAL FUNCTION OF HALL GENERATORS WITH 4 ELECTRODES [J]. ARCHIV FUR ELEKTROTECHNIK, 1968, 52 (01): : 11 - &

[4] INOUE T, 1983, JPN J APPL PHYS S221, V22, P357

[5] NEGATIVE DIFFERENTIAL RESISTANCE AT 300-K IN A SUPERLATTICE QUANTUM STATE TRANSFER DEVICE [J]. APPLIED PHYSICS LETTERS, 1984, 44 (11) : 1054 - 1056

[6] SUGIYAMA Y, 1986, 6TH P SENS S, P55

[7] SUGIYAMA Y, 1987, 4TH INT C SOL STAT S, P547

[8] TACANO M, 1987, IEEE ELECTRON DEVICE, V22, P22

[1] INTEGRATED SEMICONDUCTOR MAGNETIC-FIELD SENSORS [J]. PROCEEDINGS OF THE IEEE, 1986, 74 (08) : 1107 - 1132

[2] MODULATION-DOPED GAAS/(AL,GA)AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS - MODFETS [J]. PROCEEDINGS OF THE IEEE, 1986, 74 (06) : 773 - 822

[3] GEOMETRICAL FUNCTION OF HALL GENERATORS WITH 4 ELECTRODES [J]. ARCHIV FUR ELEKTROTECHNIK, 1968, 52 (01): : 11 - &

[4] INOUE T, 1983, JPN J APPL PHYS S221, V22, P357

[5] NEGATIVE DIFFERENTIAL RESISTANCE AT 300-K IN A SUPERLATTICE QUANTUM STATE TRANSFER DEVICE [J]. APPLIED PHYSICS LETTERS, 1984, 44 (11) : 1054 - 1056

[6] SUGIYAMA Y, 1986, 6TH P SENS S, P55

[7] SUGIYAMA Y, 1987, 4TH INT C SOL STAT S, P547

[8] TACANO M, 1987, IEEE ELECTRON DEVICE, V22, P22