MODULATION-DOPED GAAS/(AL,GA)AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS - MODFETS

[1] ABE M, 1983, P GAAS IC S ARIZONA, P158

[2] Abe M., 1982, IEEE T ELECTRON DEV, V29, P1088, DOI 10.1109/T-ED.1982.20838

[3] ABE M, 1983, IEEE GAAS IC S, P158

[4] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672

[5] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .2. LOW-TEMPERATURE MOBILITY [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) : 3900 - 3907

[6] ANDRE JP, 1983, I PHYS C SER, V65, P117

[7] RADIATION ANNEALING OF GAAS IMPLANTED WITH SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) : L124 - L126

[8] ARIA M, 1981, JPN J APPL PHYS, V20, pL124

[9] BIAS DEPENDENCE OF CAPACITANCES IN MODULATION-DOPED FETS AT 4 GHZ [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (04) : 123 - 125

[10] MICROWAVE PERFORMANCE OF GAAS-MESFETS WITH ALGAAS BUFFER LAYERS - EFFECT OF HETEROINTERFACES [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 82 - 84

[1] ABE M, 1983, P GAAS IC S ARIZONA, P158

[2] Abe M., 1982, IEEE T ELECTRON DEV, V29, P1088, DOI 10.1109/T-ED.1982.20838

[3] ABE M, 1983, IEEE GAAS IC S, P158

[4] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J]. REVIEWS OF MODERN PHYSICS, 1982, 54 (02) : 437 - 672

[5] SELF-CONSISTENT RESULTS FOR A GAAS/ALXGA1-XAS HETEROJUNCTION .2. LOW-TEMPERATURE MOBILITY [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (12) : 3900 - 3907

[6] ANDRE JP, 1983, I PHYS C SER, V65, P117

[7] RADIATION ANNEALING OF GAAS IMPLANTED WITH SI [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (02) : L124 - L126

[8] ARIA M, 1981, JPN J APPL PHYS, V20, pL124

[9] BIAS DEPENDENCE OF CAPACITANCES IN MODULATION-DOPED FETS AT 4 GHZ [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (04) : 123 - 125

[10] MICROWAVE PERFORMANCE OF GAAS-MESFETS WITH ALGAAS BUFFER LAYERS - EFFECT OF HETEROINTERFACES [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 82 - 84