共 304 条
- [91] COMPARISON OF GAAS-MESFET NOISE FIGURES [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (01) : 47 - 49
- [92] MOLECULAR-BEAM EPITAXY OF PARA-TYPE MODULATION DOPED GAAS AND APPLICATION TO PARA-CHANNEL FIELD-EFFECT TRANSISTORS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 584 - 584
- [93] GOSSARD AC, J VAC SCI TECHNOL
- [94] SEMI-EMPIRICAL EXPRESSION FOR DIRECT TRANSCONDUCTANCE AND EQUIVALENT SATURATED VELOCITY IN SHORT-GATE-LENGTH MESFETS [J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (05): : 185 - 188
- [97] HALLAIS J, 1978, I PHYS, V45, P361
- [98] HALLAIS J, 1979, I PHYS C SER, V45, P361
- [99] HAZEL WH, 1984, IEEE ELECTRON DEVICE, V5, P78
- [100] Hendel R. L., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P857