MODULATION-DOPED GAAS/(AL,GA)AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS - MODFETS

被引:96
作者
DRUMMOND, TJ
MASSELINK, WT
MORKOC, H
机构
[1] UNIV ILLINOIS, DEPT PHYS, URBANA, IL 61801 USA
[2] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA
关键词
D O I
10.1109/PROC.1986.13556
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:773 / 822
页数:50
相关论文
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