MODULATION-DOPED GAAS/(AL,GA)AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS - MODFETS

被引：96

作者：

DRUMMOND, TJ

MASSELINK, WT

MORKOC, H

机构：

[1] UNIV ILLINOIS, DEPT PHYS, URBANA, IL 61801 USA

[2] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

关键词：

D O I：

10.1109/PROC.1986.13556

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：773 / 822

页数：50

共 304 条

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