MICROWAVE PERFORMANCE OF GAAS-MESFETS WITH ALGAAS BUFFER LAYERS - EFFECT OF HETEROINTERFACES

被引：6

作者：

ARNOLD, D ^{[1
]}

KOPP, W ^{[1
]}

FISCHER, R ^{[1
]}

HENDERSON, T ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 03期

关键词：

D O I：

10.1109/EDL.1984.25839

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：82 / 84

页数：3

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[6] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE [J].

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[8] MOLECULAR-BEAM EPITAXIAL GAAS-ALXGA1-XAS HETEROSTRUCTURES FOR METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR APPLICATIONS [J].

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[10] GRADED-GAP ALXGA1-XAS-GAAS HETEROJUNCTION [J].

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