CHARACTERISTICS OF SUB-MICRON GATE GAAS-FETS WITH AL0.3GA0.7AS BUFFERS - EFFECTS OF INTERFACE QUALITY

被引：10

作者：

KOPP, W ^{[1
]}

MORKOC, H ^{[1
]}

DRUMMOND, TJ ^{[1
]}

SU, SL ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 02期

关键词：

D O I：

10.1109/EDL.1982.25472

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：46 / 48

页数：3

共 8 条

[1]

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[2]

HALLAIS J, 1978, P GAAS RELATED COMPS, V45, P361

[3] VERY LOW RESISTANCE NI-AUGE-NI CONTACTS TO N-GAAS [J].

HEIME, K ;

KONIG, U ;

KOHN, E ;

WORTMANN, A .

SOLID-STATE ELECTRONICS, 1974, 17 (08) :835-&

[4]

MORKOC H, 1982, J APPL PHYS FEB

[5]

MORKOC H, UNPUB J ELECTROCHEM

[6] LOW-NOISE GAAS FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

OMORI, M ;

DRUMMOND, TJ ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1981, 39 (07) :566-569

[7] MOLECULAR-BEAM EPITAXIAL GAAS-ALXGA1-XAS HETEROSTRUCTURES FOR METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR APPLICATIONS [J].

WANG, WI ;

JUDAPRAWIRA, S ;

WOOD, CEC ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1981, 38 (09) :708-710

[8] GRADED-GAP ALXGA1-XAS-GAAS HETEROJUNCTION [J].

WOMAC, JF ;

REDIKER, RH .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :4129-&

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