SEMICONDUCTOR OPTICAL AMPLIFIERS

被引：14

作者：

EISENSTEIN, G

机构：

来源：

IEEE CIRCUITS AND DEVICES MAGAZINE | 1989年 / 5卷 / 04期

关键词：

D O I：

10.1109/101.29899

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：25 / 30

页数：6

共 28 条

[1]

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[2]

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[3] 1.5-MU-M BAND TRAVELING-WAVE SEMICONDUCTOR OPTICAL AMPLIFIERS WITH WINDOW FACET STRUCTURE [J].

CHA, I ;

KITAMURA, M ;

MITO, I .

ELECTRONICS LETTERS, 1989, 25 (03) :242-243

[4] NONLINEAR-INTERACTIONS IN OPTICAL AMPLIFIERS FOR MULTIFREQUENCY LIGHTWAVE SYSTEMS [J].

DARCIE, TE ;

JOPSON, RM .

ELECTRONICS LETTERS, 1988, 24 (10) :638-640

[5] TRAVELING-WAVE OPTICAL AMPLIFIER AT 1.3-MU-M [J].

EISENSTEIN, G ;

JOHNSON, BC ;

RAYBON, G .

ELECTRONICS LETTERS, 1987, 23 (19) :1020-1022

[6] GAIN RECOVERY-TIME OF TRAVELING-WAVE SEMICONDUCTOR OPTICAL AMPLIFIERS [J].

EISENSTEIN, G ;

TUCKER, RS ;

WIESENFELD, JM ;

HANSEN, PB ;

RAYBON, G ;

JOHNSON, BC ;

BRIDGES, TJ ;

STORZ, FG ;

BURRUS, CA .

APPLIED PHYSICS LETTERS, 1989, 54 (05) :454-456

[7] THEORETICAL DESIGN OF SINGLE-LAYER ANTIREFLECTION COATINGS ON LASER FACETS [J].

EISENSTEIN, G .

AT&T BELL LABORATORIES TECHNICAL JOURNAL, 1984, 63 (02) :357-364

[8]

EISENSTEIN G, 1986, INT J ELECTRON, V60, P113, DOI 10.1080/00207218608920766

[9] DEPOSITION AND MEASUREMENTS OF ELECTRON-BEAM-EVAPORATED SIO-CHI ANTIREFLECTION COATINGS ON INGAASP INJECTION-LASER FACETS [J].

EISENSTEIN, G ;

RAYBON, G ;

STULZ, LW .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (01) :12-16

[10]

EISENSTEIN G, 1989, OPTICAL FIBER COMM C

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