DEPOSITION AND MEASUREMENTS OF ELECTRON-BEAM-EVAPORATED SIO-CHI ANTIREFLECTION COATINGS ON INGAASP INJECTION-LASER FACETS

被引：23

作者：

EISENSTEIN, G ^{[1
]}

RAYBON, G ^{[1
]}

STULZ, LW ^{[1
]}

机构：

[1] AT&T BELL LABS,PHOTON CIRCUITS RES DEPT,HOLMDEL,NJ 07733

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1109/50.3955

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：12 / 16

页数：5

共 15 条

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[4]

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[7] POLARIZATION-DEPENDENT GAIN SPECTRUM OF A 1.5-MU-M TRAVELING-WAVE OPTICAL AMPLIFIER [J].

JOPSON, RM ;

EISENSTEIN, G ;

HALL, KL ;

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KOREN, U .

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[8] MEASUREMENT OF THE MODAL REFLECTIVITY OF AN ANTI-REFLECTION COATING ON A SUPERLUMINESCENT DIODE [J].

KAMINOW, IP ;

EISENSTEIN, G ;

STULZ, LW .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (04) :493-495

[9] THEORETICAL-ANALYSIS AND FABRICATION OF ANTIREFLECTION COATINGS ON LASER-DIODE FACETS [J].

SAITOH, T ;

MUKAI, T ;

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[10]

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