MEASUREMENT OF THE MODAL REFLECTIVITY OF AN ANTI-REFLECTION COATING ON A SUPERLUMINESCENT DIODE

被引:105
作者
KAMINOW, IP
EISENSTEIN, G
STULZ, LW
机构
关键词
D O I
10.1109/JQE.1983.1071887
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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收藏
页码:493 / 495
页数:3
相关论文
共 10 条
[1]  
AMANN MC, 1974, ELECTRON LETT, V15, P41
[2]   SHORT-CAVITY SINGLE-MODE 1.3 MU-INGAASP LASERS WITH EVAPORATED HIGH-REFLECTIVITY MIRRORS [J].
BURRUS, CA ;
LEE, TP ;
DENTAI, AG .
ELECTRONICS LETTERS, 1981, 17 (25-2) :954-956
[3]  
CLARKE RH, 1983, INT J ELECTRON, V53, P495
[4]  
CLARKE RH, UNPUB BELL SYST TECH
[5]   CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].
HAKKI, BW ;
PAOLI, TL .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4113-4119
[6]   GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].
HAKKI, BW ;
PAOLI, TL .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) :1299-1306
[7]  
IKEGAMI I, 1972, IEEE J QUANTUM ELECT, V8, P470
[8]   LATERAL CONFINEMENT INGAASP SUPERLUMINESCENT DIODE AT 1.3 MU-M [J].
KAMINOW, IP ;
EISENSTEIN, G ;
STULZ, LW ;
DENTAI, AG .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (01) :78-82
[9]   COMPUTER-MODEL OF A SUPERLUMINESCENT LED WITH LATERAL CONFINEMENT [J].
MARCUSE, D ;
KAMINOW, IP .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (07) :1234-1244
[10]  
RAMO S, 1965, FIELDS WAVES COMMUNI, P349