PHYSICAL AND CHEMICAL-PROPERTIES OF THE ANODIC OXIDE HGCDTE INTERFACE

被引:37
作者
STAHLE, CM
HELMS, CR
SCHAAKE, HF
STRONG, RL
SIMMONS, A
PALLIX, JB
BECKER, CH
机构
[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75265
[2] SRI INT,CHEM PHYS LAB,MENLO PK,CA 94025
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 02期
关键词
D O I
10.1116/1.576206
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:474 / 482
页数:9
相关论文
共 23 条
[1]   SURFACE-ANALYSIS BY NONRESONANT MULTIPHOTON IONIZATION OF DESORBED OR SPUTTERED SPECIES [J].
BECKER, CH ;
GILLEN, KT .
ANALYTICAL CHEMISTRY, 1984, 56 (09) :1671-1674
[2]  
CATAGNUS PC, 1976, Patent No. 3997018
[3]  
Davis G. D., 1981, Proceedings of the Society of Photo-Optical Instrumentation Engineers, V285, P126
[4]   USE OF SURFACE BEHAVIOR DIAGRAMS TO COMPARE ANODIC AND PHOTOCHEMICAL OXIDES OF HG0.8CD0.2TE [J].
DAVIS, GD ;
BUCHNER, SP ;
BECK, WA ;
BYER, NE .
APPLIED SURFACE SCIENCE, 1983, 15 (1-4) :238-246
[5]  
DAVIS GD, 1983, P SOC PHOTO-OPT INST, V409, P35, DOI 10.1117/12.935734
[6]   ANODIC OXIDE COMPOSITION AND HG DEPLETION AT THE OXIDE-SEMICONDUCTOR INTERFACE OF HG1-XCDXTE [J].
DAVIS, GD ;
SUN, TS ;
BUCHNER, SP ;
BYER, NE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :472-476
[7]   CHARACTERIZATION OF NATIVE AND HETEROOXIDE LAYERS ON COMPOUND SEMICONDUCTORS BY COMBINED USE OF SURFACE-ANALYSIS METHODS [J].
KAISER, U ;
SANDER, P ;
GANSCHOW, O ;
BENNINGHOVEN, A .
FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE, 1984, 319 (6-7) :877-882
[8]   THERMAL-STABILITY OF OXIDE-FILMS ON CD0.2 HG0.8 TE - A COMBINED SIMS, AES, AND XPS STUDY [J].
KAISER, U ;
GANSCHOW, O ;
WIEDMANN, L ;
BENNINGHOVEN, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :657-661
[9]  
KAISER U, 1982, SECONDARY ION MASS S, V3, P365
[10]   AES SPUTTER PROFILES OF ANODIC OXIDE-FILMS ON (HG,CD)TE [J].
MORGEN, P ;
SILBERMAN, JA ;
LINDAU, I ;
SPICER, WE ;
WILSON, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :161-163