ANODIC OXIDE COMPOSITION AND HG DEPLETION AT THE OXIDE-SEMICONDUCTOR INTERFACE OF HG1-XCDXTE

被引：77

作者：

DAVIS, GD

SUN, TS

BUCHNER, SP

BYER, NE

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571041

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：472 / 476

页数：5

共 22 条

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