ANNEALING AND PROFILE OF INTERSTITIAL IRON IN BORON-DOPED SILICON

Deep level transient spectroscopy and double correlation technique were used to examine the annealing and profiles of interstitial iron in boron-doped silicon at a temperature range from 50 to 400-degrees-C. The results show that iron-boron pairs begin to break-up at a temperature as low as 50-degrees-C. After a short time annealing (5 min) at a temperature up to 400-degrees-C, most of the iron from the breaking is converted into interstitial iron. We also find that the distribution of interstitial iron under the silicon surface is not uniform, and it depends on the annealing time and temperature. The interstitial iron near the silicon surface decreases with the increase of the annealing time.