MOLECULAR-BEAM EPITAXIAL-GROWTH OF BORON-DOPED GAAS FILMS

被引：23

作者：

HOKE, WE

LEMONIAS, PJ

WEIR, DG

HENDRIKS, HT

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1993年 / 11卷 / 03期

关键词：

D O I：

10.1116/1.586734

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs films doped with boron in the 10(20) cm-3 range were grown by solid source molecular-beam epitaxy. Lattice contractions were observed in x-ray double crystal spectra. Substitutional boron concentrations up to 1.7 X 10(20) CM-3 were obtained with narrow x-ray linewidths and specular surface morphology. For a given boron flux, the substitutional concentration was dependent on growth temperature. P-type conductivity due to boron incorporation was measured in the films with hole concentration reaching 1 X 10(19) CM-3. The lattice contractions exhibited good thermal stability for rapid thermal anneals.

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页码：902 / 904

页数：3

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