CRYSTAL-GROWTH AND PROPERTIES OF BORON MONOARSENIDE

[1] PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) : 509 - 511

[2] Armington A.F., 1967, J CRYST GROWTH, V1, P47, DOI DOI 10.1016/0022-0248(67)90007-3

[3] PREPARATION AND PROPERTIES OF BORON ARSENIDES AND BORON ARSENIDE-GALLIUM ARSENIDE MIXED CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 813 - &

[4] PERRI A, 1958, ACTA CRYSTALLOGR, V11, P310

[5] THE PREPARATION AND PROPERTIES OF BORON PHOSPHIDES AND ARSENIDES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1960, 82 (06) : 1330 - 1332

[6] 1965, JANAF INTERIM THERMO

[1] PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) : 509 - 511

[2] Armington A.F., 1967, J CRYST GROWTH, V1, P47, DOI DOI 10.1016/0022-0248(67)90007-3

[3] PREPARATION AND PROPERTIES OF BORON ARSENIDES AND BORON ARSENIDE-GALLIUM ARSENIDE MIXED CRYSTALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (08) : 813 - &

[4] PERRI A, 1958, ACTA CRYSTALLOGR, V11, P310

[5] THE PREPARATION AND PROPERTIES OF BORON PHOSPHIDES AND ARSENIDES [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1960, 82 (06) : 1330 - 1332

[6] 1965, JANAF INTERIM THERMO