OBSERVATION OF EXTREMELY LONG ELECTRON-SPIN-RELAXATION TIMES IN P-TYPE DELTA-DOPED GAAS/ALXGA1-XAS DOUBLE HETEROSTRUCTURES

被引：71

作者：

WAGNER, J ^{[1
]}

SCHNEIDER, H ^{[1
]}

RICHARDS, D ^{[1
]}

FISCHER, A ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.47.4786

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spin-relaxation dynamics of electrons have been studied in p-type delta-doped GaAs:Be/AlxGa1-xAs double heterostructures by time-resolved photoluminescence polarization measurements. A relaxation time of congruent-to 20 ns has been observed which is two orders of magnitude longer than that reported for corresponding acceptor concentrations in homogeneously doped GaAs. This enhancement, which arises from a drastic reduction of the electron-hole wave-function overlap, demonstrates that electron-hole scattering with a simultaneous exchange interaction dominates spin relaxation at low temperatures.

引用

页码：4786 / 4789

页数：4

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