OBSERVATION OF EXTREMELY LONG ELECTRON-SPIN-RELAXATION TIMES IN P-TYPE DELTA-DOPED GAAS/ALXGA1-XAS DOUBLE HETEROSTRUCTURES

被引:71
作者
WAGNER, J [1 ]
SCHNEIDER, H [1 ]
RICHARDS, D [1 ]
FISCHER, A [1 ]
PLOOG, K [1 ]
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
来源
PHYSICAL REVIEW B | 1993年 / 47卷 / 08期
关键词
D O I
10.1103/PhysRevB.47.4786
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Spin-relaxation dynamics of electrons have been studied in p-type delta-doped GaAs:Be/AlxGa1-xAs double heterostructures by time-resolved photoluminescence polarization measurements. A relaxation time of congruent-to 20 ns has been observed which is two orders of magnitude longer than that reported for corresponding acceptor concentrations in homogeneously doped GaAs. This enhancement, which arises from a drastic reduction of the electron-hole wave-function overlap, demonstrates that electron-hole scattering with a simultaneous exchange interaction dominates spin relaxation at low temperatures.
引用
收藏
页码:4786 / 4789
页数:4
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