PHONON-MEDIATED ASYMMETRIC FANO PROFILES IN A SEMICONDUCTOR QUANTUM-WELL

被引：12

作者：

JIN, KJ ^{[1
]}

PAN, SH ^{[1
]}

YANG, GZ ^{[1
]}

机构：

[1] CHINA CTR ADV SCI & TECHNOL,WORLD LAB,BEIJING 100080,PEOPLES R CHINA

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.51.9764

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We predict, on the basis of a model calculation, that an asymmetric Fano-type line shape in the intersubband absorption spectrum will be produced by the electron-LO-phonon interaction in a suitably designed quantum well. The asymmetry parameter q, the broadening Γ, and the frequency shift Δωp in the Fano profile are varied with the change of the quantum-well structure parameters, and q is also altered by the variation of the doping density in the well. © 1995 The American Physical Society.

引用

页码：9764 / 9769

页数：6

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