EPITAXIAL-GROWTH OF C-60 AND KL(001) SURFACE

被引：17

作者：

YANAGI, H

SASAKI, T

机构：

[1] Faculty of Engineering, Kobe University, Rokkodai, Nada

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.112949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of C60 is observed for vacuum-deposited crystals on the KI(001) cleavage surface. When the KI surface is kept at 240-degrees-C and the deposition rate is controlled to be less than a monolayer min-1 (approximately0.5 nm min-1), rectangular platelike crystals of C60 grow epitaxially. Transmission electron micrographs and electron diffraction patterns of the crystals exhibit that the (002) planes of the face-centered cubic C60 crystal orient in parallel to the KI(001) surface. This epitaxial orientation is explained in terms of the c(2X2) commensurate lattice matching.

引用

页码：1222 / 1223

页数：2

共 15 条

[11] X-RAY-DIFFRACTION AND ELECTRON-SPECTROSCOPY OF EPITAXIAL MOLECULAR C60 FILMS [J].