STRAIN COMPENSATION IN SI1-XGEX BY HEAVY BORON DOPING

被引:35
作者
TILLACK, B
ZAUMSEIL, P
MORGENSTERN, G
KRUGER, D
RITTER, G
机构
[1] Institute for Semiconductor Physics, D-15204 Frankfurt (Oder)
关键词
D O I
10.1063/1.114988
中图分类号
O59 [应用物理学];
学科分类号
摘要
Strain compensation in SiGe by heavy boron doping was demonstrated. For this purpose, SiGe layers containing up to several percent of boron were deposited using rapid thermal chemical vapor deposition. The strain compensation effect was evaluated by double crystal x-ray diffraction measuring the difference between the diffraction peak distances of the boron doped samples and a reference sample without boron which can be directly related to the decrease of the lattice constant in Sil(1-x-y)Ge(x)B(y) due to the incorporation of boron. The films were characterized by cross-sectional transmission electron microscopy (XTEM), Auger electron spectroscopy (AES), and secondary ion mass spectroscopy (SIMS). (C) 1995 American Institute of Physics.
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页码:1143 / 1144
页数:2
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