BAND-GAP NARROWING DETERMINATION BY PHOTOLUMINESCENCE ON STRAINED B-DOPED SI0.82GE0.18 LAYERS GROWN ON SI

被引：17

作者：

SOUIFI, A ^{[1
]}

BREMOND, G ^{[1
]}

BENYATTOU, T ^{[1
]}

GUILLOT, G ^{[1
]}

DUTARTRE, D ^{[1
]}

WARREN, P ^{[1
]}

机构：

[1] CTR NATL ETUD & TELECOMMUN,F-38243 MEYLAN,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 23期

关键词：

D O I：

10.1063/1.109165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work reports on photoluminescence (PL) characterization of heavy boron-dope SiGe(p+)/Si(p) heterostructures and Si(p+)/Si(p) pseudoheterostructures grown by rapid thermal chemical vapor deposition. For the pseudoheterostructures, the band-gap narrowing is measured in the 4 X 10(18)-1.5 X 10(19) CM-3 doping level range in very good agreement with bulk silicon results. The band-gap narrowing of SiGe strained layers has been determined for the first time, by means of PL measurements on boron-doped Si0.82Ge0.18 strained alloy up to 4 X 10(19) cm-3. The reduced band gap of the Si0.82Ge0.18 alloy is deduced, taking into account both strain and heavy doping effects and compared to band-gap narrowing found in Si.

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页码：2986 / 2988

页数：3

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共 20 条

[1] PHOTOLUMINESCENCE AND ELECTRICAL CHARACTERIZATION OF SIGE/SI HETEROSTRUCTURES GROWN BY RAPID THERMAL CHEMICAL VAPOR-DEPOSITION [J].

BREMOND, G ;

SOUIFI, A ;

BENYATTOU, T ;

DUTARTRE, D .

THIN SOLID FILMS, 1992, 222 (1-2) :60-68

[2] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].

DEAN, PJ ;

HAYNES, JR ;

FLOOD, WF .

PHYSICAL REVIEW, 1967, 161 (03) :711-&

[3] BAND-GAP NARROWING FROM LUMINESCENCE IN P-TYPE SI [J].

DUMKE, WP .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3200-3202

[4] EXCITONIC PHOTOLUMINESCENCE FROM SI-CAPPED STRAINED SI1-XGEX LAYERS [J].

DUTARTRE, D ;

BREMOND, G ;

SOUIFI, A ;

BENYATTOU, T .

PHYSICAL REVIEW B, 1991, 44 (20) :11525-11527

[5] TEMPERATURE-DEPENDENCE OF ELECTRON-HOLE-LIQUID LUMINESCENCE IN SI [J].

HAMMOND, RB ;

MCGILL, TC ;

MAYER, JW .

PHYSICAL REVIEW B, 1976, 13 (08) :3566-3575

[6] HETEROJUNCTION BIPOLAR-TRANSISTORS USING SI-GE ALLOYS [J].

IYER, SS ;

PATTON, GL ;

STORK, JMC ;

MEYERSON, BS ;

HARAME, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2043-2064

[7] BANDGAP NARROWING AND ITS EFFECTS ON THE PROPERTIES OF MODERATELY AND HEAVILY-DOPED GERMANIUM AND SILICON [J].

JAIN, SC ;

MERTENS, RP ;

VANOVERSTRAETEN, RJ .

ADVANCES IN ELECTRONICS AND ELECTRON PHYSICS, 1991, 82 :197-275

[8] NEW PHOTOLUMINESCENCE LINE-SERIES SPECTRA ATTRIBUTED TO DECAY OF MULTIEXCITON COMPLEXES BOUND TO LI, B, AND P CENTERS IN SI [J].

KOSAI, K ;

GERSHENZ.M .

PHYSICAL REVIEW B, 1974, 9 (02) :723-726

[9] SIGE/SI HETEROJUNCTION INTERNAL PHOTOEMISSION LONG-WAVELENGTH INFRARED DETECTORS FABRICATED BY MOLECULAR-BEAM EPITAXY [J].

LIN, TL ;

KSENDZOV, A ;

DEJEWSKI, SM ;

JONES, EW ;

FATHAUER, RW ;

KRABACH, TN ;

MASERJIAN, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (05) :1141-1144

[10] INTENSE PHOTOLUMINESCENCE BETWEEN 1.3-MU AND 1.8-MU-M FROM STRAINED SI1-XGEX ALLOYS [J].

NOEL, JP ;

ROWELL, NL ;

HOUGHTON, DC ;

PEROVIC, DD .

APPLIED PHYSICS LETTERS, 1990, 57 (10) :1037-1039