BAND-GAP NARROWING FROM LUMINESCENCE IN P-TYPE SI

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892

[2] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[3] EFFECT OF DONOR IMPURITIES ON THE DENSITY OF STATES NEAR THE BAND EDGE IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5633 - 5642

[4] BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1981, 24 (04): : 1971 - 1986

[5] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1846 - 1848

[6] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[7] COMPARISON OF BAND-GAP SHRINKAGE OBSERVED IN LUMINESCENCE FROM N+-SI WITH THAT FROM TRANSPORT AND OPTICAL-ABSORPTION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 196 - 198

[8] Iles P. A., 1975, 11th IEEE Photovoltaic Specialists Conference, P19

[9] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J]. PHYSICAL REVIEW, 1958, 111 (05): : 1245 - 1254

[10] ENERGY-GAP IN SI AND GE - IMPURITY DEPENDENCE [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2634 - 2646

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892

[2] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &

[3] EFFECT OF DONOR IMPURITIES ON THE DENSITY OF STATES NEAR THE BAND EDGE IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5633 - 5642

[4] BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1981, 24 (04): : 1971 - 1986

[5] TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) : 1846 - 1848

[6] CYCLOTRON RESONANCE OF ELECTRONS AND HOLES IN SILICON AND GERMANIUM CRYSTALS [J]. PHYSICAL REVIEW, 1955, 98 (02): : 368 - 384

[7] COMPARISON OF BAND-GAP SHRINKAGE OBSERVED IN LUMINESCENCE FROM N+-SI WITH THAT FROM TRANSPORT AND OPTICAL-ABSORPTION MEASUREMENTS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 196 - 198

[8] Iles P. A., 1975, 11th IEEE Photovoltaic Specialists Conference, P19

[9] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI [J]. PHYSICAL REVIEW, 1958, 111 (05): : 1245 - 1254

[10] ENERGY-GAP IN SI AND GE - IMPURITY DEPENDENCE [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2634 - 2646