DISPLACEMENT CRITERION FOR AMORPHIZATION OF SILICON DURING ION-IMPLANTATION

[1] BRICE DK, 1975, ION IMPLANTATION RAN, V1

[2] AN APPLICATION OF THE BOLTZMANN TRANSPORT-EQUATION TO ION RANGE AND DAMAGE DISTRIBUTIONS IN MULTILAYERED TARGETS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6176 - 6182

[3] ANNEALING CHARACTERISTICS OF N-TYPE DOPANTS IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 14 (10) : 313 - &

[4] ROLE OF DAMAGE IN ANNEALING CHARACTERISTICS OF ION IMPLANTED SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) : 671 - &

[5] FELDMAN LC, 1970, J APPL PHYS, V41, P3667

[6] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &

[7] GIBBONS JF, 1975, PROJECTED RANGE STAT

[8] KINCHIN GH, 1955, REP PROGR PHYS, V18, P2

[9] Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042

[10] NORTH JC, 1971, ION IMPLANTATION, P143

[1] BRICE DK, 1975, ION IMPLANTATION RAN, V1

[2] AN APPLICATION OF THE BOLTZMANN TRANSPORT-EQUATION TO ION RANGE AND DAMAGE DISTRIBUTIONS IN MULTILAYERED TARGETS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6176 - 6182

[3] ANNEALING CHARACTERISTICS OF N-TYPE DOPANTS IN ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1969, 14 (10) : 313 - &

[4] ROLE OF DAMAGE IN ANNEALING CHARACTERISTICS OF ION IMPLANTED SI [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) : 671 - &

[5] FELDMAN LC, 1970, J APPL PHYS, V41, P3667

[6] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &

[7] GIBBONS JF, 1975, PROJECTED RANGE STAT

[8] KINCHIN GH, 1955, REP PROGR PHYS, V18, P2

[9] Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042

[10] NORTH JC, 1971, ION IMPLANTATION, P143