CHARACTERIZING TRAPS IN MESFETS USING INTERNAL TRANSCONDUCTANCE (GM) FREQUENCY DISPERSION

被引：15

作者：

KACHWALLA, Z

机构：

[1] CSIRO, Sydney, Aust, CSIRO, Sydney, Aust

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 08期

关键词：

D O I：

10.1016/0038-1101(88)90431-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

TRANSISTORS, FIELD EFFECT

引用

收藏

页码：1315 / 1320

页数：6

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