ACCOUNT OF DISLOCATION-STRUCTURE AT STRESS MEASUREMENTS IN HETEROEPITAXIAL SYSTEMS .2. EXPERIMENT

被引：3

作者：

KHAZAN, LS

MATVEEVA, LA

SEMENOVA, GN

TKHORIK, YA

机构：

[1] Institute of Semiconductors, Academy of Sciences of the Ukrainian Ssr

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 56卷 / 01期

关键词：

D O I：

10.1002/pssa.2210560105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

From a review of numerous papers it follows that stress det.ermjnation in epitaxial systems on the basis of its curvature and Stoney's formula leads to contradictory results. A theoretical analysis [l] shows an inadequacy of such formulae for the systems with stress relaxation (dislocations). The influence of such dislocations on curvature is analysed and the obtained results are compared with the experiment in the case of the Ge‐GaAs heterostructure. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：47 / 54

页数：8

共 24 条

[1] STRESSES IN HETEROEPITAXIAL LAYERS - GAAS1-XPX ON GAAS
ABRAHAMS, MS
WEISBERG, LR
TIETJEN, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3754 - &
[2] [Anonymous], 1965, TEORIYA UPRUGOSTI
[3] BUBLIK VT, 1978, S PROCESSAM ROSTA SI, P178
[4] MECHANICAL STRESSES IN HETEROSYSTEM GERMANIUM GALLIUM ARSENIDE
DATSENKO, LI
KLIMENKO, AP
MATVEYEVA, LA
PROKOPENKO, IV
TKHORIK, YA
[J]. THIN SOLID FILMS, 1976, 33 (03) : 275 - 280
[5] DEWIT R, 1977, KONTINUALNAYA TEORIY
[6] INTERNAL STRESSES IN MULTILAYERED STRUCTURES
GHATE, PB
HALL, LH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) : 491 - &
[7] HOFFMAN RW, 1966, PHYSICS THIN FILMS, V3
[8] INDENBOM VL, 1962, USP FIZ NAUK+, V76, P557
[9] INDENBOM VL, 1966, FIZIKA KRISTALLOV DE, V1, P5
[10] KHAZAN LS, 1979, PHYS STATUS SOLIDI A, V54, P447, DOI 10.1002/pssa.2210540202

← 1 2 3 →