EFFECTS OF MINORITY-CARRIER STORAGE AT THE INTERFACE STATES ON THE FILL FACTOR OF MIS SOLAR-CELLS

被引:3
作者
NIELSEN, OM
机构
来源
IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES | 1979年 / 3卷 / 02期
关键词
D O I
10.1049/ij-ssed.1979.0012
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Current/voltage characteristics obtained under dark and illuminated conditions have been examined for Al-p-Si m. i. s. solar cells. The results obtained show that the voltage across the cells taken at the maximum-power point is typically 50mV smaller when the cells are illuminated compared to the voltage at the same point in darkness. This is explained as increase in the recombination current and as an increased concentration of minority carriers at the interface states of about 10**1**2 cm** minus **2 when going from dark to illuminated conditions. The result is that the fill factor obtained from the illuminated characteristic is about 9% smaller that if the fill factor is calculated from the dark characteristics.
引用
收藏
页码:51 / 55
页数:5
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