STUDY OF EXCITON SELECTION-RULES OF LAYER-TYPE SEMICONDUCTOR GASE BY THERMOREFLECTANCE

被引：11

作者：

ANTOCI, S

MIHICH, L

机构：

[1] CNR,GRP NAZL STRUTTURA MAT,PAVIA,ITALY

[2] UNIV PAVIA,INST FIS,PAVIA,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1973年 / 12卷 / 07期

关键词：

D O I：

10.1016/0038-1098(73)90305-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：649 / 651

页数：3

共 10 条

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[2]

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[3]

Bassani F., 1967, NUOVO CIMENTO B, V10, P95, DOI DOI 10.1007/BF02710685

[4] SELECTION RULE IN FUNDAMENTAL DIRECT ABSORPTION OF GASE [J].

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[6]

BREBNER JL, 1965, HELV PHYS ACTA, V38, P650

[7]

BREBNER JL, 1962, P INT C PHYS SEMICON, P760

[8] SEMICONDUCTORS OF THE TYPE A-III B-VI [J].

FIELDING, P ;

FISCHER, G ;

MOOSER, E .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :434-437

[9]

Halpern J., 1966, P INT C PHYS SEMICON, P180

[10] BAND STRUCTURES AND OPTICAL PROPERTIES OF SEMICONDUCTING LAYER COMPOUNDS GAS AND GASE [J].

KAMIMURA, H ;

NAKAO, K .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1968, 24 (06) :1313-&

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