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INP SURFACE CONDUCTING FILMS FROM ELECTRON-PULSE ANNEALING
被引:12
作者
:
DAVIES, DE
论文数:
0
引用数:
0
h-index:
0
DAVIES, DE
KENNEDY, EF
论文数:
0
引用数:
0
h-index:
0
KENNEDY, EF
COMER, JJ
论文数:
0
引用数:
0
h-index:
0
COMER, JJ
LORENZO, JP
论文数:
0
引用数:
0
h-index:
0
LORENZO, JP
机构
:
来源
:
APPLIED PHYSICS LETTERS
|
1980年
/ 36卷
/ 11期
关键词
:
D O I
:
10.1063/1.91374
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:922 / 924
页数:3
相关论文
共 3 条
[1]
PULSE ELECTRON ANNEALING OF ION-IMPLANTED INP
DAVIES, DE
论文数:
0
引用数:
0
h-index:
0
机构:
Rome Air Development Center, Solid State Sciences Division, Hanscom AFB
DAVIES, DE
LORENZO, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Rome Air Development Center, Solid State Sciences Division, Hanscom AFB
LORENZO, JP
RYAN, TG
论文数:
0
引用数:
0
h-index:
0
机构:
Rome Air Development Center, Solid State Sciences Division, Hanscom AFB
RYAN, TG
FITZGERALD, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Rome Air Development Center, Solid State Sciences Division, Hanscom AFB
FITZGERALD, JJ
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(08)
: 631
-
633
[2]
PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE
GREENWALD, AC
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
GREENWALD, AC
KIRKPATRICK, AR
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
KIRKPATRICK, AR
LITTLE, RG
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
LITTLE, RG
MINNUCCI, JA
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
MINNUCCI, JA
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
: 783
-
787
[3]
ANODIC-OXIDATION AND ELECTRICAL CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED INP
LORENZO, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Rome Air Development Center, Deputy for Electronic Technology, Hanscom AFB
LORENZO, JP
DAVIES, DE
论文数:
0
引用数:
0
h-index:
0
机构:
Rome Air Development Center, Deputy for Electronic Technology, Hanscom AFB
DAVIES, DE
RYAN, TG
论文数:
0
引用数:
0
h-index:
0
机构:
Rome Air Development Center, Deputy for Electronic Technology, Hanscom AFB
RYAN, TG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(01)
: 118
-
121
←
1
→
共 3 条
[1]
PULSE ELECTRON ANNEALING OF ION-IMPLANTED INP
DAVIES, DE
论文数:
0
引用数:
0
h-index:
0
机构:
Rome Air Development Center, Solid State Sciences Division, Hanscom AFB
DAVIES, DE
LORENZO, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Rome Air Development Center, Solid State Sciences Division, Hanscom AFB
LORENZO, JP
RYAN, TG
论文数:
0
引用数:
0
h-index:
0
机构:
Rome Air Development Center, Solid State Sciences Division, Hanscom AFB
RYAN, TG
FITZGERALD, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Rome Air Development Center, Solid State Sciences Division, Hanscom AFB
FITZGERALD, JJ
[J].
APPLIED PHYSICS LETTERS,
1979,
35
(08)
: 631
-
633
[2]
PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE
GREENWALD, AC
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
GREENWALD, AC
KIRKPATRICK, AR
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
KIRKPATRICK, AR
LITTLE, RG
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
LITTLE, RG
MINNUCCI, JA
论文数:
0
引用数:
0
h-index:
0
机构:
Spire Corporation, Bedford
MINNUCCI, JA
[J].
JOURNAL OF APPLIED PHYSICS,
1979,
50
(02)
: 783
-
787
[3]
ANODIC-OXIDATION AND ELECTRICAL CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED INP
LORENZO, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Rome Air Development Center, Deputy for Electronic Technology, Hanscom AFB
LORENZO, JP
DAVIES, DE
论文数:
0
引用数:
0
h-index:
0
机构:
Rome Air Development Center, Deputy for Electronic Technology, Hanscom AFB
DAVIES, DE
RYAN, TG
论文数:
0
引用数:
0
h-index:
0
机构:
Rome Air Development Center, Deputy for Electronic Technology, Hanscom AFB
RYAN, TG
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(01)
: 118
-
121
←
1
→