ANODIC-OXIDATION AND ELECTRICAL CARRIER CONCENTRATION PROFILES OF ION-IMPLANTED INP

A technique is described that combines controlled anodic oxidation with differential Hall data to obtain electrical carrier concentration profiles of ion-implanted indium phosphide. Reproducible oxide layers are grown using a citric acid, ethylene glycol electrolyte bath and a controlled voltage rise technique. A variation in mP material consumption with anodic oxide thickness and with anodizing technique is observed. For the purposes of demonstration, silicon and sulfur species implanted at 1 MeV to fluences of 3 x 1014 cm-2 are examined. These profiles are measured on <100> implanted semi-insulating InP. The technique could be adapted to measure other alloys in the InGaAsP system. © 1979, The Electrochemical Society, Inc. All rights reserved.