MOS CHARACTERISTICS OF ULTRATHIN SIO2 PREPARED BY OXIDIZING SI IN N2O

被引：76

作者：

TING, W

LO, GQ

AHN, J

CHU, TY

KWONG, DL

机构：

[1] Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, Austin

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 08期

关键词：

D O I：

10.1109/55.119150

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

MOS characteristics of ultrathin gate oxides prepared by oxidizing Si in N2O have been studied. Compared to control oxides grown in O2, N2O oxides exhibit significantly improved resistance to charge trapping and interface state generation under hot-carrier stressing. In addition, both charge to breakdown and time to breakdown are improved considerably. MOSFET's with N2O gate dielectrics exhibit enhanced current drivability and improved resistance to g(m) degradation during channel hot-electron stressing.

引用

页码：416 / 418

页数：3

共 9 条

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