DOPING-INDUCED AND PRESSURE-INDUCED CHANGE OF ELECTRICAL AND MAGNETIC-PROPERTIES IN THE MOTT-HUBBARD INSULATOR LATIO3

被引：101

作者：

OKADA, Y

ARIMA, T

TOKURA, Y

MURAYAMA, C

MORI, N

机构：

[1] UNIV TOKYO,DEPT PHYS,TOKYO 113,JAPAN

[2] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 106,JAPAN

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 13期

关键词：

D O I：

10.1103/PhysRevB.48.9677

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A perovskitelike compound LaTiO3 shows insulating or barely metallic behavior depending on a slight (less-than-or-equal-to 0.04) deviation of the Ti valence (+3) arising from nonstoichiometry of La and/or oxygen. In order to investigate electronic properties of the specimens in the very vicinity of the Mott insulator-metal phase boundary, we have measured the doping- and pressure-induced effects on the electrical and magnetic properties. The results have indicated a crossover behavior from localized to itinerant nature of the electronic state with increase of the doping level and one-electron bandwidth.

引用

页码：9677 / 9683

页数：7