MOS SURFACE POTENTIAL AND GROSS NONUNIFORMITY

被引:4
作者
LOPEZ, AD [1 ]
STRAIN, RJ [1 ]
机构
[1] BELL TEL LABS INC, MURRAY HILL, NJ 07879 USA
关键词
D O I
10.1016/0038-1101(73)90190-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:507 / 511
页数:5
相关论文
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[2]   A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].
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[3]   SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].
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