OPTICAL ANALYSIS OF AL-LAYER OXIDATION DURING NB/AL2O3-AL/NB JOSEPHSON-JUNCTION FABRICATION

被引:2
作者
DOLATA, R
NEUHAUS, M
JUTZI, W
机构
[1] Institut für Elektrotechnische Grundlagen der Informatik, Universität Karlsruhe, D-76187 Karlsruhe
关键词
NB/AL2O3-AL/NB; JOSEPHSON JUNCTIONS; BARRIER GROWTH;
D O I
10.1016/0011-2275(94)90069-8
中图分类号
O414.1 [热力学];
学科分类号
摘要
The oxidation of thin Al layers on niobium has been investigated by reflectivity measurements. The simple experimental set-up allows for in situ observation of tunnel barrier growth with good time resolution. The dynamics of the Al2O3 layer growth is examined as a function of O-2 pressure. The observed reflectivity change during oxidation is correlated with the critical Josephson current density.
引用
收藏
页码:833 / 835
页数:3
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