CHALCOGENIDE MEMORY MATERIALS

被引：4

作者：

HOLMBERG, SH

SHANKS, RR

BLUHM, VA

机构：

[1] Burroughs Corporation, San Diego, 92127, California

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 03期

关键词：

amorphous semi-conductor memory; chalcogenide memory materials; non-volatile memory; ovonic;

D O I：

10.1007/BF02655632

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The operating principles of an amorphous semiconductor non-volatile memory (ovonic memory switch) are reviewed. Methods for including the memory switch in bipolar integrated circuits with two levels of conductor are discussed. Electrical performance currently attainable from integrated memory devices of this type is outlined. © 1979 AIME.

引用

收藏

页码：333 / 344

页数：12

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