FABRICATION AND PROPERTIES OF CHALCOGENIDE GLASS MEMORY ARRAYS

被引：5

作者：

DARGAN, CL ^{[1
]}

BURTON, P ^{[1
]}

REDSTALL, RM ^{[1
]}

机构：

[1] GEC, HIRST RES CTR, WEMBLEY, ENGLAND

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1975年 / 38卷 / 06期

关键词：

D O I：

10.1080/00207217508920449

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：711 / 727

页数：17

共 8 条

[1] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J].

BUCKLEY, WD ;

MOSS, SC .

SOLID-STATE ELECTRONICS, 1972, 15 (12) :1331-&

[2] COMPARISON OF MEMORY SWITCHING OPERATION IN A NUMBER OF AMORPHOUS-CHALCOGENIDE SYSTEMS [J].

DARGAN, CL ;

BURTON, P ;

PHILLIPS, SV ;

BLOOR, AS ;

NESVADBA, P .

JOURNAL OF MATERIALS SCIENCE, 1974, 9 (10) :1595-1601

[3] METALLURGICAL PROPERTIES AND ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE-SILICON CONTACTS [J].

KIRCHER, CJ .

SOLID-STATE ELECTRONICS, 1971, 14 (06) :507-+

[4]

NEALE RG, 1970, ELECTRONICS, V43, P56

[5] APPLICATION OF AMORPHOUS MATERIALS TO COMPUTER MEMORIES [J].

NEALE, RG ;

ASELTINE, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (02) :195-205

[6]

Ovshinsky S. R., 1970, Journal of Non-Crystalline Solids, V2, P99, DOI 10.1016/0022-3093(70)90125-0

[7] PLANAR MILLIMETER-WAVE EPITAXIAL SILICON SCHOTTKY-BARRIER CONVERTER DIODES [J].

RUSCH, WVT ;

BURRUS, CA .

SOLID-STATE ELECTRONICS, 1968, 11 (05) :517-&

[8] SPECIFIC CONTACT RESISTANCE OF PD2SI CONTACTS ON N-SI AND P-SI [J].

SHEPELA, A .

SOLID-STATE ELECTRONICS, 1973, 16 (04) :477-481

← 1 →