SUMMATION AND SATURATION BEHAVIOR OF THE VOLUME PINNING FORCE IN NEUTRON-IRRADIATED V3SI

被引：29

作者：

KUPFER, H ^{[1
]}

MANUEL, AA ^{[1
]}

机构：

[1] UNIV GENEVA,DEPT PHYS MAT CONDENSEE,CH-1211 GENEVA 4,SWITZERLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 54卷 / 01期

关键词：

D O I：

10.1002/pssa.2210540120

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Neutron irradiated V3Si is used as a model system for the investigation of the dependence of the volume pinning force on the defect structure in A15 superconductors. The dislocation loop concentration determined by TEM is varied within three orders of magnitude. Up to the highest concentration the system is still dilute, but there is absolutely no field region where the volume pinning force is proportional to the concentration of pinning centres as predicted by the summation models and proved in low x‐material like Nb. This unexpected behaviour is accompanied by the peak effect and by a saturation of the volume pinning force in the whole field region at a fluence of 1018cm−2. The explanation is based on the threshold criterion which is not satisfied in these microstructures. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：153 / 165

页数：13

共 32 条

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