INTERSUBBAND RELAXATION OF HOT CARRIERS IN QUANTUM-WELL SYSTEMS

被引:3
作者
GOODNICK, SM [1 ]
LARY, JE [1 ]
LUGLI, P [1 ]
机构
[1] UNIV ROME 2,DIPARTIMENTO INGN MECCAN,I-00173 ROME,ITALY
关键词
D O I
10.1016/0749-6036(91)90310-N
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We use an ensemble Monte Carlo simulation of coupled electrons, holes and nonequilibrium polar optical phonons in multiple quantum well systems to model the intersubband relaxation of hot carriers measured in ultra-fast optical experiments. We have investigated the effect of various models of confined photon modes on the energy relaxation and intersubband transition rate in single quantum well and coupled well systems. In particular, the symmetry of the atomic displacement with respect to the quantum well has a marked effect on the relative intersubband versus intrasubband scattering rates, depending on whether one considers electrostatic boundary conditions(slab modes) or mechanical boundary conditions(guided modes). In single quantum wells systems, the overall intersubband relaxation time is not found to be strongly dependent on the confined mode model used due to competing effects of hot phonons and the relative intrasubband scattering rates. For coupled well systems, the relaxation rate is much more dependent on the exact nature of the phonon amplitude. Large effects are found associated with localized AlAs interface modes which dominate the intersubband relaxation time. © 1991.
引用
收藏
页码:461 / 466
页数:6
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