PREPARATION OF CD1-XYXSB2O6 THIN-FILM ON GLASS SUBSTRATE BY RADIO-FREQUENCY SPUTTERING

被引:37
作者
YANAGAWA, K
OHKI, Y
OMATA, T
HOSONO, H
UEDA, N
KAWAZOE, H
机构
[1] TOKYO INST TECHNOL,ENGN MAT RES LAB,MIDORI KU,YOKOHAMA,KANAGAWA 227,JAPAN
[2] INST MOLEC SCI,OKAZAKI,AICHI 444,JAPAN
关键词
D O I
10.1063/1.112316
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cd1-xYxSb2O6 thin films were deposited onto a silica glass substrate by rf sputtering method. The highest conductivity observed for Cd0.95Y0.05Sb2O6 thin films was 4.1 x 10 S cm-1, with a carrier concentration of 1.3 X 10(20) cm-3 and a Hall mobility of 1.9 cm2 V-1S-1. No distinct optical absorption band was observed from the visible to the infrared region. These observations show that Cd1-xYxSb2O6 thin films have characteristics of a transparent conductor, whose transparent wavelength region covers the near infrared.
引用
收藏
页码:406 / 408
页数:3
相关论文
共 15 条
[1]   TRANSPARENT CONDUCTIVE CDIN2O4 THIN-FILMS PREPARED BY DC REACTIVE SPUTTERING [J].
BUDZYNSKA, K ;
LEJA, E ;
SKRZYPEK, S .
SOLAR ENERGY MATERIALS, 1985, 12 (01) :57-68
[2]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[3]   BANDGAP WIDENING IN HEAVILY DOPED OXIDE SEMICONDUCTORS USED AS TRANSPARENT HEAT-REFLECTORS [J].
HAMBERG, I ;
GRANQVIST, CG ;
BERGGREN, KF ;
SERNELIUS, BE ;
ENGSTROM, L .
SOLAR ENERGY MATERIALS, 1985, 12 (06) :479-490
[5]  
Magneli A., 1941, ARK KEMI MINER GEO B, V15, P1
[6]   NEW OXIDE PHASE WITH WIDE BAND-GAP AND HIGH ELECTROCONDUCTIVITY CDGA2O4 SPINEL [J].
OMATA, T ;
UEDA, N ;
HIKUMA, N ;
UEDA, K ;
MIZOGUCHI, H ;
HASHIMOTO, T ;
KAWAZOE, H .
APPLIED PHYSICS LETTERS, 1993, 62 (05) :499-500
[7]   NEW ULTRAVIOLET-TRANSPORT ELECTROCONDUCTIVE OXIDE, ZNGA2O4 SPINEL [J].
OMATA, T ;
UEDA, N ;
UEDA, K ;
KAWAZOE, H .
APPLIED PHYSICS LETTERS, 1994, 64 (09) :1077-1078
[8]   REVISED EFFECTIVE IONIC-RADII AND SYSTEMATIC STUDIES OF INTERATOMIC DISTANCES IN HALIDES AND CHALCOGENIDES [J].
SHANNON, RD .
ACTA CRYSTALLOGRAPHICA SECTION A, 1976, 32 (SEP1) :751-767
[9]   NEW OXIDE PHASE WITH WIDE BAND-GAP AND HIGH ELECTROCONDUCTIVITY, MGIN2O4 [J].
UEDA, N ;
OMATA, T ;
HIKUMA, N ;
UEDA, K ;
MIZOGUCHI, H ;
HASHIMOTO, T ;
KAWAZOE, H .
APPLIED PHYSICS LETTERS, 1992, 61 (16) :1954-1955
[10]   PREPARATION OF MGIN2O4-X THIN-FILMS ON GLASS SUBSTRATE BY RF-SPUTTERING [J].
UNNO, H ;
HIKUMA, N ;
OMATA, T ;
UEDA, N ;
HASHIMOTO, T ;
KAWAZOE, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (9A) :L1260-L1262